Test Method for Detection of Oxidation Induced Defects in Polished Silicon Wafers
1 Scope
This standard specifies the test method for detection of oxidation induced defects in polished silicon wafers.
This standard is applicable to the detection of crystal defects induced or enhanced in the surface area of polished silicon wafers during the simulation of oxidation process of wafers.
This method can also be used for the detection of oxidation induced defects of monocrystalline silicon.
2 Normative References
The following documents contain provisions which, through reference in this text, constitute provisions of this standard. For dated references, subsequent amendments (excluding corrections), or revisions, of any of these publications do not apply to this standard. However, parties to agreements based on this standard are encouraged to investigate the possibility of applying the most recent editions of the normative documents indicated below. For undated references, the latest edition of the normative document referred to applies.
GB/T 1554 Test Method for Crystallographic Perfection of Silicon by Preferential Etch Techniques
GB/T 14264 Semiconductor Materials — Terms and Definitions
YS/T 209 Metallographs Collection for Original Defects of Crystalline Silicon
3 Terms and Definitions
For the purposes of this document, the terms and definitions given in GB/T 14264 apply.
4 Principle
The conditions of polished silicon wafers oxidation process are simulated, and the defects in the wafers are decorated or enlarged by oxidation, or both, and then the defects are displayed with a preferred etching solution and observed by microscopic technique.
5 Reagents and Materials
5.1 Chromium trioxide: guaranteed reagent.
5.2 Hydrofluoric acid: guaranteed reagent.
5.3 Nitric acid: guaranteed reagent.
5.4 Ammonia water: guaranteed reagent.
5.5 Hydrochloric acid: guaranteed reagent.
5.6 Hydrogen peroxide: guaranteed reagent.
5.7 Pure water, the resistivity is greater than 10 MΩ·cm (25°C).
5.8 Acetic acid: guaranteed reagent.
5.9 Copper nitrate: guaranteed reagent.
Foreword II
1 Scope
2 Normative References
3 Terms and Definitions
4 Principle
5 Reagents and Materials
6 Instruments and Apparatus
7 Sample Preparation
8 Procedure
9 Calculation of Detection Results
10 Precision
11 Test Report
Annex A (Informative) Classification and Comparison List of Formulation, Application and Applicability of Several Common Chrome-free and Chrome-containing Corrosion Solutions
Test Method for Detection of Oxidation Induced Defects in Polished Silicon Wafers
1 Scope
This standard specifies the test method for detection of oxidation induced defects in polished silicon wafers.
This standard is applicable to the detection of crystal defects induced or enhanced in the surface area of polished silicon wafers during the simulation of oxidation process of wafers.
This method can also be used for the detection of oxidation induced defects of monocrystalline silicon.
2 Normative References
The following documents contain provisions which, through reference in this text, constitute provisions of this standard. For dated references, subsequent amendments (excluding corrections), or revisions, of any of these publications do not apply to this standard. However, parties to agreements based on this standard are encouraged to investigate the possibility of applying the most recent editions of the normative documents indicated below. For undated references, the latest edition of the normative document referred to applies.
GB/T 1554 Test Method for Crystallographic Perfection of Silicon by Preferential Etch Techniques
GB/T 14264 Semiconductor Materials — Terms and Definitions
YS/T 209 Metallographs Collection for Original Defects of Crystalline Silicon
3 Terms and Definitions
For the purposes of this document, the terms and definitions given in GB/T 14264 apply.
4 Principle
The conditions of polished silicon wafers oxidation process are simulated, and the defects in the wafers are decorated or enlarged by oxidation, or both, and then the defects are displayed with a preferred etching solution and observed by microscopic technique.
5 Reagents and Materials
5.1 Chromium trioxide: guaranteed reagent.
5.2 Hydrofluoric acid: guaranteed reagent.
5.3 Nitric acid: guaranteed reagent.
5.4 Ammonia water: guaranteed reagent.
5.5 Hydrochloric acid: guaranteed reagent.
5.6 Hydrogen peroxide: guaranteed reagent.
5.7 Pure water, the resistivity is greater than 10 MΩ·cm (25°C).
5.8 Acetic acid: guaranteed reagent.
5.9 Copper nitrate: guaranteed reagent.
Contents of GB/T 4058-2009
Foreword II
1 Scope
2 Normative References
3 Terms and Definitions
4 Principle
5 Reagents and Materials
6 Instruments and Apparatus
7 Sample Preparation
8 Procedure
9 Calculation of Detection Results
10 Precision
11 Test Report
Annex A (Informative) Classification and Comparison List of Formulation, Application and Applicability of Several Common Chrome-free and Chrome-containing Corrosion Solutions
