Standard No.:	YS/T 679-2008
English Name:	Test methods for minority carrier diffusion length in extrinsic semiconductors by measurement of steady-steady-state surface photovoltage
Chinese Name:	非本征半导体中少数载流子扩散长度的稳态表面光电压测试方法
Chinese Classification:	H80    Semimetal and semiconductor material in general
Professional Classification:	YS    Professional Standard - Non-ferrous Metal
ICS Classification:	29.045 29.045    Semiconducting materials 29.045
Source Content Issued by:	NDRC
Issued on:	2008-3-12
Implemented on:	2008-9-1
Status:	superseded
Superseded by:	YS/T 679-2018 Test methods for minority carrier diffusion length in extrinsic semiconductors. Surface photovoltage method
Superseded on:	2019-4-1
Target Language:	English
File Format:	PDF
Word Count:	7000 words
Translation Price(USD):	210.0
Delivery:	via email in 1~3 business day

本标准适用于非本征单晶半导体材料样品或相同导电类型重掺衬底上沉积已知电阻率的同质外延层中的少数载流子扩散长度的测量。要求样品或外延层厚度大于4倍的扩散长度。 本标准修改采用SEMI MF 391-1106《非本征半导体中少数载流子扩散长度的稳态表面光电压测试方法》。
本标准与SEMI MF 391-1106相比主要有如下变化：
———标准格式按GB/T 1.1要求编排；
———将SEMI MF 391-1106中的部分注转换为正文；
———将SEMI MF 391-1106中部分内容进行了编排。