2025-12-15 216.73.216.89
Code of China Chinese Standard Classification Professional Classification ICS Classification Latest
Position: Search valid to be valid superseded to be superseded abolished to be abolished
Standard No. Title Price(USD) Delivery Status Add to Cart
GB/T 24574-2009 Test methods for photoluminescence analysis of single crystal silicon for Ⅲ-Ⅴ impurities 210.0 via email in 1~3 business day valid,,2010-6-1
GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices 180.0 via email in 1~3 business day valid,,2010-6-1
GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal 150.0 via email in 1~3 business day superseded,2024-3-1,2010-6-1
GB/T 6620-2009 Test method for measuring warp on silicon slices by noncontact scanning 180.0 via email in 1~3 business day valid,,2010-6-1
GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge 150.0 via email in 1~3 business day superseded,2024-3-1,2010-6-1
GB/T 6619-2009 Test methods for bow of silicon wafers 180.0 via email in 1~3 business day valid,,2010-6-1
GB/T 24579-2009 Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-atomic absorption spectroscopy 210.0 via email in 1~3 business day valid,,2010-6-1
GB/T 6621-2009 Testing methods for surface flatness of silicon slices 110.0 via email in 1~3 business day valid,,2010-6-1
GB/T 4061-2009 Polycrystalline silicon-examination method-assessment of sandwiches on cross-section by chemical corrosion 80.0 via email in 1~3 business day valid,,2010-6-1
GB/T 24582-2009 Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-inductively coupled plasma mass spectrometry 120.0 via email in 1~3 business day superseded,2024-3-1,2010-6-1
GB/T 14139-2009 Silicon epitaxial wafers 180.0 via email in 1~3 business day superseded2020-05-01,2020-5-1,2010-6-1
GB/T 1558-2009 Test method for substitutional atomic carbon concent of silicon by infrared absorption 150.0 via email in 1 business day superseded,2024-7-1,2010-6-1
GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer 180.0 via email in 1~3 business day to be superseded,2026-2-1,2010-6-1
GB/T 12963-2009 Specification for Polycrystalline Silicon 40.0 via email in 1 business day superseded,2015-9-1,2010-6-1
GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon 360.0 via email in 1~3 business day superseded,2021-12-1,2010-6-1
SJ/T 11396-2009 The sapphire substrates for nitride based light-emitting diode 190.0 via email in 1~3 business day abolished2017-05-12 ,,2010-1-1
GB/T 2881-2008 Silicon metal 80.0 via email in 1~3 business day superseded,2015-8-1,2008-9-1
YS/T 679-2008 Test methods for minority carrier diffusion length in extrinsic semiconductors by measurement of steady-steady-state surface photovoltage 210.0 via email in 1~3 business day superseded,2019-4-1,2008-9-1
YS/T 651-2007 Selenium dioxide 140.0 via email in 1~3 business day valid,,2008-5-1
GB/T 11093-2007 Liquid encapsulated czochralski-grown gallium arsenide single crystals and as-cut slices 210.0 via email in 1~3 business day valid,,2008-2-1
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GB/T 24574-2009 Test methods for photoluminescence analysis of single crystal silicon for Ⅲ-Ⅴ impurities 
  Issued on: 2009-10-30   Price(USD): 210.0
GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices 
  Issued on: 2009-10-30   Price(USD): 180.0
GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal 
  Issued on: 2009-10-30   Price(USD): 150.0
GB/T 6620-2009 Test method for measuring warp on silicon slices by noncontact scanning 
  Issued on: 2009-10-30   Price(USD): 180.0
GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge 
  Issued on: 2009-10-30   Price(USD): 150.0
GB/T 6619-2009 Test methods for bow of silicon wafers 
  Issued on: 2009-10-30   Price(USD): 180.0
GB/T 24579-2009 Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-atomic absorption spectroscopy 
  Issued on: 2009-10-30   Price(USD): 210.0
GB/T 6621-2009 Testing methods for surface flatness of silicon slices 
  Issued on: 2009-10-30   Price(USD): 110.0
GB/T 4061-2009 Polycrystalline silicon-examination method-assessment of sandwiches on cross-section by chemical corrosion 
  Issued on: 2009-10-30   Price(USD): 80.0
GB/T 24582-2009 Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-inductively coupled plasma mass spectrometry 
  Issued on: 2009-10-30   Price(USD): 120.0
GB/T 14139-2009 Silicon epitaxial wafers 
  Issued on: 2009-10-30   Price(USD): 180.0
GB/T 1558-2009 Test method for substitutional atomic carbon concent of silicon by infrared absorption 
  Issued on: 2009-10-30   Price(USD): 150.0
GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer 
  Issued on: 2009-11-30   Price(USD): 180.0
GB/T 12963-2009 Specification for Polycrystalline Silicon 
  Issued on: 2009-10-30   Price(USD): 40.0
GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon 
  Issued on: 2009-10-30   Price(USD): 360.0
SJ/T 11396-2009 The sapphire substrates for nitride based light-emitting diode 
  Issued on: 2009-11-17   Price(USD): 190.0
GB/T 2881-2008 Silicon metal 
  Issued on: 2008-3-31   Price(USD): 80.0
YS/T 679-2008 Test methods for minority carrier diffusion length in extrinsic semiconductors by measurement of steady-steady-state surface photovoltage 
  Issued on: 2008-3-12   Price(USD): 210.0
YS/T 651-2007 Selenium dioxide 
  Issued on: 2007-11-14   Price(USD): 140.0
GB/T 11093-2007 Liquid encapsulated czochralski-grown gallium arsenide single crystals and as-cut slices 
  Issued on: 2007-12-18   Price(USD): 210.0
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