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GB/T 24574-2009 Test methods for photoluminescence analysis of single crystal silicon for Ⅲ-Ⅴ impurities
Issued on: 2009-10-30 Price(USD): 210.0 |
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GB/T 6618-2009 Test method for thickness and total thickness variation of silicon slices
Issued on: 2009-10-30 Price(USD): 180.0 |
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GB/T 1555-2009 Testing methods for determining the orientation of a semiconductor single crystal
Issued on: 2009-10-30 Price(USD): 150.0 |
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GB/T 6620-2009 Test method for measuring warp on silicon slices by noncontact scanning
Issued on: 2009-10-30 Price(USD): 180.0 |
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GB/T 6616-2009 Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge
Issued on: 2009-10-30 Price(USD): 150.0 |
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GB/T 6619-2009 Test methods for bow of silicon wafers
Issued on: 2009-10-30 Price(USD): 180.0 |
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GB/T 24579-2009 Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-atomic absorption spectroscopy
Issued on: 2009-10-30 Price(USD): 210.0 |
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GB/T 6621-2009 Testing methods for surface flatness of silicon slices
Issued on: 2009-10-30 Price(USD): 110.0 |
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GB/T 4061-2009 Polycrystalline silicon-examination method-assessment of sandwiches on cross-section by chemical corrosion
Issued on: 2009-10-30 Price(USD): 80.0 |
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GB/T 24582-2009 Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-inductively coupled plasma mass spectrometry
Issued on: 2009-10-30 Price(USD): 120.0 |
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GB/T 14139-2009 Silicon epitaxial wafers
Issued on: 2009-10-30 Price(USD): 180.0 |
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GB/T 1558-2009 Test method for substitutional atomic carbon concent of silicon by infrared absorption
Issued on: 2009-10-30 Price(USD): 150.0 |
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GB/T 14140-2009 Test method for measuring diameter of semiconductor wafer
Issued on: 2009-11-30 Price(USD): 180.0 |
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GB/T 12963-2009 Specification for Polycrystalline Silicon
Issued on: 2009-10-30 Price(USD): 40.0 |
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GB/T 1551-2009 Test method for measuring resistivity of monocrystal silicon
Issued on: 2009-10-30 Price(USD): 360.0 |
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SJ/T 11396-2009 The sapphire substrates for nitride based light-emitting diode
Issued on: 2009-11-17 Price(USD): 190.0 |
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GB/T 2881-2008 Silicon metal
Issued on: 2008-3-31 Price(USD): 80.0 |
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YS/T 679-2008 Test methods for minority carrier diffusion length in extrinsic semiconductors by measurement of steady-steady-state surface photovoltage
Issued on: 2008-3-12 Price(USD): 210.0 |
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YS/T 651-2007 Selenium dioxide
Issued on: 2007-11-14 Price(USD): 140.0 |
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GB/T 11093-2007 Liquid encapsulated czochralski-grown gallium arsenide single crystals and as-cut slices
Issued on: 2007-12-18 Price(USD): 210.0 |
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